NovaSensor PT1907 | Pressure & Temperature Sensor Die

NovaSensor PT1907 Pressure and Temperature Sensor Die

NovaSensor PT1907 is a piezoresistive sensor die that is designed for combined pressure and temperature measurements in harsh media. Pressure is applied from the backside of the die, which eliminates direct contact between the topside of the sensor circuitry and the applied media. This allows PT1907 to measure pressure and temperature in aggressive liquids and gases.

A vacuum reference cavity made with a Silicon cap on top of die is used for absolute pressure measurement. PT1907 also features excellent long-term stability and repeatability (< 0.1% / year typical), made possible by the NovaSensor SenStable® process.

The integrated on-chip temperature sensor allows for high accuracy measurement of temperature and improves accuracy of pressure measurement.

Applications

Automotive systems
Process control systems
Aerospace
Pressure and temperature measurements in aggressive media

Features

Harsh media compatibility
Highly reliable, solid state silicon pressure sensor die pressurized from back (cavity) side
Pressure Ranges: 60, 120,180, 300, 450, 600 and 1000 PSIA
Temperature Range: -40°C to 150°C
On-chip temperature sensor
Die Dimensions (L x W x H): 1.9 mm x 1.9 mm x 1.6 mm (with glass), 2.0 mm x 2.0 mm x 0.8 mm (without glass)
Flexible bond pads configuration allows for wire bonding, either to only one side or two sides of the die

Specifications

Pressure Sensor Specifications
General	Value	Units	Notes
Pressure Range	60, 120,180, 300, 450, 600, 1000	PSIA
Maximum Overpressure	2X		Rated Pressure
Backside Burst Pressure	10X >6000	PSI	2, 6
Electrical @ 25°C, Unless noted	Value	Units	Notes
Excitation (DC)	1	mA
Excitation (DC)	5	Volt	10VDC Max
Bridge Resistance	5,000 ±20%	Ω
Environmental	Value	Units	Notes
Operating Temperature Range	-40 to 150	°C	2
Storage Temperature Range	-55 to 160	°C
Mechanical	Value	Units	Notes
Dimensions	1.9 x 1.9 x 1.6 2.0 x 2.0 x 0.8	mm with glass mm without glass	8
Bond Pad Dimensions	0.10 x 0.10	mm L x W	9
Media Compatibility	Silicon and Borosilicate Glass

Pressure Sensor Performance Parameters⁽¹⁾	Value	Units	Notes
Zero Offset	±10	mV/V
FSO	160 ±45	mV	3
Pressure Linearity	±0.2	%Span	4, 7
Pressure Hysteresis	±10	µV/V	5, 7
Temperature Coef. of Zero	±5	µV/V/°C	5, 7
Temperature Coef. of Resistance	0.27	%°C	5, 7
Temperature Coef. of Sensitivity	-0.19	%°C	5, 7
Thermal Hysteresis of Zero	±25	µV/V	5, 7

Temperature Sensor Specifications
General	Value	Units	Notes
Temperature Range	-40 to 150	°C
Electrical	Value	Units	Notes
Excitation (DC)	10-100	µA	13
Performance Parameters⁽¹⁰⁾	Value	Units	Notes
Zero	0.625	V	7, 11
Sensitivity	-2.15	mV/°C	7, 12
FSO	405	mV	7, 12
Linearity	±0.1	%	7, 12
Zero Pressure Sensitivity	±10	µV/PSI	7
Notes: All values measured at 25ºC and 5V excitation, unless otherwise noted. Samples from each wafer are used to verify bridge resistance, offset, span, linearity and die performance in the temperature range between 0ºC and 70ºC. Backside burst pressure and operating temperature for sensor utilizing PT1907 die can be lower than corresponding parameters for the die. Typical span is equal to 160mV at 300psi. Best fit in straight line. Between 0ºC and 70ºC. 10X of rated pressure for 60 to 300psi Die, >6000psi for 450 to 1000psi Die. Typical value. Die for high pressure (>300psi) has no glass pedestal. Aluminium bond pads. All values measured at 25ºC and 20 μA excitation, unless otherwise noted. 100% probed for zero output at 25ºC. Samples from each wafer are tested to verify sensitivity, FSO and linearity in the temperature range between 0ºC and 70ºC. 10-25 μA excitation is recommended.